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this is information on a product in full production. april 2014 docid17486 rev 8 1/19 strh100n10 rad-hard 100 v, 48 a n-channel power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 70 krad tid ? see radiation hardened applications ? satellite ? high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for product in die form and for other packages. to-254aa 1 2 3 d(1) g(3) s(2) sc30150 v bdss i d r ds(on) q g 100 v 48 a 30 m ? 135 nc table 1. device summary part number escc part number quality level package lead finish mass (g) temp. range eppl STRH100N10HY1 - engineering model to-254aa gold 10 -55 to 150c - strh100n10hyg 5205/021/01 escc flight yes strh100n10hyt 5205/021/02 solder dip - www.st.com
contents strh100n10 2/19 docid17486 rev 8 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7.1 other information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid17486 rev 8 3/19 strh100n10 electrical ratings 19 1 electrical ratings (t c = 25 c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 100 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) 48 a i d (3) drain current (continuous) at t c = 100 c 30 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 192 a p tot (3) total dissipation 170 w dv/dt (5) 5. i sd 48 a, di/dt 100 a/ s, v dd = 80% v (br)dss. peak diode recovery voltage slope 2.6 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.52 c/w r thc-s case-to-sink typ 0.21 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 24 a e as (1) single pulse avalanche energy (starting t j =25 c, i d = i ar , v dd =50 v) 954 mj e as single pulse avalanche energy (starting t j =110 c, i d = i ar , v dd =50 v) 280 mj e ar repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 10 khz, t j = 25 c, duty cycle = 50%) 60 mj
electrical ratings strh100n10 4/19 docid17486 rev 8 e ar repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 24 mj repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 7.7 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit
docid17486 rev 8 5/19 strh100n10 electrical characteristics 19 2 electrical characteristics (t c = 25 c unless otherwise specified). pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 100 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v; i d = 24 a 0.030 0.035 w table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f=1 mhz 3940 4925 5910 pf c oss (1) output capacitance 543 679 814 pf c rss reverse transfer capacitance 190 237 284 pf c oss eq. (1) 1. this value is guaranteed over the full range of temperature. equivalent output capacitance (2) 2. this value is defined as the ratio between the q oss and the voltage value applied. v gs = 0, v dd = 80 v 480 pf q g total gate charge v dd = 50 v, i d = 48 a, v gs =12 v 108 135 162 nc q gs gate-to-source charge 21 27 33 nc q gd gate-to-drain (?miller?) charge 36 45 54 nc r g (3) 3. not tested, guaranteed by process. gate input resistance f=1 mhz gate dc bias=0 test signal level=20mv open drain 1.2 1.7 2 l g gate inductance 4.5 nh l s source inductance 7.5 nh l d drain inductance 7.5 nh
electrical characteristics strh100n10 6/19 docid17486 rev 8 table 7. switching times (pre-irradiation) symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 50 v, i d = 24 a, r g = 4.7 , v gs = 12 v 23 29.5 36 ns t r rise time 29 40 52 ns t d(off) turn-off-delay time 79 99 119 ns t f fall time 33 64 95 ns table 8. source drain diode (pre-irradiation) (1) 1. refer to the figure 16 . symbol parameter test conditions min. typ. max unit i sd source-drain current 48 a i sdm (2) 2. pulse width limited by safe operating area. source-drain current (pulsed) 192 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 48 a, v gs = 0 1.5 v t rr (4) 4. not tested in production, guaranteed by process. reverse recovery time i sd = 48 a, di/dt = 100 a/ s v dd = 50 v, t j = 25 c 328 413 498 ns q rr (4) reverse recovery charge 5 c i rrm (4) reverse recovery current 24 a t rr(4) reverse recovery time i sd = 48 a, di/dt = 100 a/ s v dd = 50 v, t j = 150 c 400 500 600 ns q rr (4) reverse recovery charge 7 c i rrm (4 reverse recovery current 28 a
docid17486 rev 8 7/19 strh100n10 radiation characteristics 19 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested, using the to-3 package, in total ionizing dose (irradiation done according to the escc 22900 specification, window 1) and single event effect according to the mil-std-750e tm1080 up to a fluence level of 3e+5 ions/cm2. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , tab le 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 240 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +4 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 15 -15 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -25% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -50% / + 5% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 36 a 10% w table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. post irradiation data guaranteed at 25c per escc 22900 specification. symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 50 v, i ds = 40 a -5% / +50% nc q gs gate-source charge 35% q gd gate-drain charge -5% / +130%
radiation characteristics strh100n10 8/19 docid17486 rev 8 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect according to mil-std-750e method 1080 (bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2 . the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. ? segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? seb immune at 60 mev/mg/cm 2 ? segr immune at 60 mev/mg/cm 2 within the safe operating area (soa) given in table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 50 a, v gs = 0 10% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = -2 v @v gs = -5 v @v gs = -10 v @v gs = -20 v kr 32 768 94 100 80 60 30 10 xe 60 1217 89 40 30 30 - 0
docid17486 rev 8 9/19 strh100n10 radiation characteristics 19 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 0 10 20 30 40 50 60 70 80 90 100 -20 -15 -10 -5 0 vds (% vdsmax) vgs (v) kr (32 mev.cm2/mg, 768mev) xe (60 mev.cm2/mg, 1217mev)
electrical characteristics (curves) strh100n10 10/19 docid17486 rev 8 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations 1000 100 10 id [a] 1 1 0 0.1 1 10 100 1000 vds [v] tj=150c t j = 1 5 0 c tc=25c t c = 2 5 c single pulse s i n g l e p u l s e 100s 1 0 0 s 1ms 1 m s 10ms 1 0 m s dc d c operation in this area is o p e r a t i o n i n t h i s a r e a i s limited by max r l i m i t e d b y m a x r ds(on) d s ( o n ) am04952v2 a m 0 4 9 5 2 v 2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -3 10 -2 k 0.2 0.05 0.02 0.01 0.1 zth=k(rthj-c+rthc-s) =tp/ tp single pulse =0.5 10 -1 0.07 hg0k i d 0 v ds (v) (a) 5 12.5 0 50 100 150 200 5v 6v 7v v gs =12v 2.5 7.5 10 am01494v1 9 '6 9 , ' 9 *6 9 $ 7 - ?& 7 - ?& 7 - ?& $0y 9 *6 4 j q& 9 9 '' 9 , ' $ , ' $ , ' $ , ' $ 9 *6 9 7 - ?& $0y c 0.1 v ds (v) (pf) 1 1 100 10 ciss coss crss 10 1000 v ds =25v, v gs =0 f=1mhz, t j =25c am01496v1
docid17486 rev 8 11/19 strh100n10 electrical characteristics (curves) 19 figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature figure 14. source drain-diode forward characteristics
test circuits strh100n10 12/19 docid17486 rev 8 5 test circuits figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 16. source drain diode
docid17486 rev 8 13/19 strh100n10 test circuits 19 figure 17. unclamped inductive load test circuit (single pul se and repetitive)
package mechanical data strh100n10 14/19 docid17486 rev 8 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 13. to-254aa mechanical data dim. mm inch min. typ. max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.56 3.81 0.140 0.150 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.02 1.14 0.035 0.040 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.571 m 2.92 3.18 n0.71 r1 1.00 0.039 r2 1.52 1.65 1.78 0.060 0.065 0.070
docid17486 rev 8 15/19 strh100n10 package mechanical data 19 figure 18. to-254aa mechanical drawing
order codes strh100n10 16/19 docid17486 rev 8 7 order codes for specific marking only the complete structure is: ? st logo ? esa logo ? date code (date of sealing of the package) : yywwa ?yy: year ? ww: week number ? a: week index ? escc part number (as mentioned in the table) ? warning signs (e.g. beo) ? country of origin: fr (france) ? part serial number within in the assembly lot contact st sales office for information about the specific conditions for products in die form and for other packages. 7.1 other information date code the date code for ?escc flight? is structured as follows: yywwz where: ? yy: last two digits of year ? ww: week digits ? z: lot index in the week documentation the table below provide a summary of the documentation provided with each type of products. table 14. ordering information order code escc part number quality level eppl package lead finish marking packing STRH100N10HY1 - engineering model - to-254aa gold STRH100N10HY1+ beo strip pack strh100n10hyg 5205/021/01 escc flight yes 520502101f + beo strh100n10hyt 5205/021/02 - solder dip 520502102f + beo
docid17486 rev 8 17/19 strh100n10 order codes 19 table 15. summary of the documentation provided quality level radiation level documentation engineering model - - escc flight 70krad certificate of conformance radiation verification test report
revision history strh100n10 18/19 docid17486 rev 8 8 revision history table 16. document revision history date revision changes 13-may-2010 1 first release. 14-jun-2010 2 updated table 1: device summary . 18-oct-2010 3 updated table 1 , 5 , 9 and 14 . 23-dec-2010 4 updated figure 2: single event effect, soa . and to-254aa mechanical data. 25-jul-2011 5 updated part numbers in table 1: device summary and table 14: ordering information . minor text changes to improve readability. 09-nov-2011 6 updated dynamic values on table 6: pre-irradiation dynamic , table 7: switching times (pre-irradiation) and table 8: source drain diode (pre-irradiation) . 31-may-2013 7 updated table 1 , table 12 , table 14 , figure 2 and section 7: order codes . minor text changes in section 3: radiation characteristics 09-apr-2014 8 modified: figure 2 minor text changes
docid17486 rev 8 19/19 strh100n10 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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